Product Introduction
The HSEM-06PS Room Temperature Variable Field Probe Bench Hall Test System can provide a variable magnetic field test environment for precision tiny (nano-scale) microelectronic devices. The system magnifies the sample under test through a microscope, zaps it with a high-precision microprobe, and connects it externally to a Hall meter for Hall testing and analysis.
The HSEM-06PS Room Temperature Variable Field Probe Table Hall Test System provides a vertically variable magnetic field environment for samples and devices up to 4 inches under test. External connection to other electrical measurement instruments allows non-destructive electrical testing of chips, wafers and devices at room temperature, such as current, voltage, resistance and other electrical signals under different magnetic fields.
System Features:
- Sample holders can hold wafer samples up to 4 inches with porous zoned controlled gas adsorption fixation. (Other sizes can be customized)
- Can provide variable magnetic field environment, magnetic field size ± 0.6T
- Up to 6 probe arms can be mounted
- Probe arm magnet adsorption, can be arbitrarily moved, and can be three-dimensional fine-tuning easy to operate, pinning precision, four probe arms of the probe can be pinned to any position of the sample.
- The probe arm adopts three coaxial cables and three coaxial connectors, the leakage current is small, within 100fA.
- CCD maximum magnification of 180 times, the maximum working distance of 100mm
Test material:
- Thermoelectric materials: bismuth telluride, lead telluride, silicon germanium alloy, etc.
- Photovoltaic materials/solar cells: (A silicon (monocrystalline silicon, amorphous silicon), CIGS (copper indium gallium selenide), cadmium telluride, chalcogenide, etc.)
- Organic Materials: (OFET, OLED)
- Transparent Conductive Metal Oxide TCO: (ITO, AZO, ZnO, IGZO (Indium Gallium Zinc Oxide), etc.)
- Semiconductor materials: SiGe, InAs, SiC, InGaAs, GaN, SiC, InP, ZnO, Ga2O3 and so on
- Two-dimensional materials: graphene, BN, MoS2, etc.
